AlN\/Oxide heterostructures for polarization enhanced transistors<\/h4>\n\n\n\n
The growing need for electricity, linked to the challenges of the digital and ecological transition, is boosting the power electronics market. Wide bandgap materials (GaN, SiC) allow pushing back the limits of silicon, while offering greater energy efficiency<\/p>\n\n\n\n
However, ultra-wide-bandgap semiconductors have more promising properties than GaN or SiC for the next generation of power electronics. Among them, Ga2<\/sub>O3<\/sub> presents a growing international interest because it meets the double challenge of reducing energy losses and lowering production costs. The optimization of the AlN\/\u03b2-Ga2<\/sub>O3<\/sub> transistor requires to address a number of material challenges, such as the nucleation of epitaxial AlN on \u03b2-Ga2<\/sub>O3<\/sub>, the polarity of the AlN layer, the eventual activation of thermal interdiffusion or the crystalline purity of the \u03b2-Ga2<\/sub>O3<\/sub> channel. The project aims to demonstrate a power transistor based on an AlN\/\u03b2-Ga2<\/sub>O3<\/sub> heterostructure and containing a polarization-induced 2DEG with a density around 1013<\/sup> cm-2<\/sup>.<\/p>\n<\/div>\n\n\n\n <\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":" ALOFET — ANR-23-CE24-0018 Abstract AlN\/Oxide heterostructures for polarization enhanced transistors The growing need for electricity, linked to the challenges of the digital and ecological transition, is boosting the power electronics market. Wide bandgap materials (GaN, SiC) allow pushing back the limits of silicon, while offering … <\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-25","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/alofet.neel.cnrs.fr\/index.php\/wp-json\/wp\/v2\/pages\/25","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/alofet.neel.cnrs.fr\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/alofet.neel.cnrs.fr\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/alofet.neel.cnrs.fr\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/alofet.neel.cnrs.fr\/index.php\/wp-json\/wp\/v2\/comments?post=25"}],"version-history":[{"count":37,"href":"https:\/\/alofet.neel.cnrs.fr\/index.php\/wp-json\/wp\/v2\/pages\/25\/revisions"}],"predecessor-version":[{"id":2001,"href":"https:\/\/alofet.neel.cnrs.fr\/index.php\/wp-json\/wp\/v2\/pages\/25\/revisions\/2001"}],"wp:attachment":[{"href":"https:\/\/alofet.neel.cnrs.fr\/index.php\/wp-json\/wp\/v2\/media?parent=25"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Transistors incorporating a high-density two-dimensional electron gas (2DEG) channel are expected to be advantageous for increasing electron mobility thanks to the screening of the polar optical phonon and longitudinal optical phonon-plasmon coupling modes. The ALOFET project proposes an innovative, still unexplored approach, inspired by AlGaN\/GaN high electron mobility transistors, which involves inducing the 2DEG by the polarization difference between an AlN barrier layer and the \u03b2-Ga2<\/sub>O3<\/sub> channel.<\/p>\n\n\n\n![\"\"](\"https:\/\/alofet.neel.cnrs.fr\/wp-content\/uploads\/2024\/05\/282-029-1024x682.jpg\")
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