Ultra-Wide bandgap oxides (UWO 2025)
25 June 2025, University of Strathclyde, Glosgow, UK

Coralie Perrier, Hitoshi Umezawa, Aboulaye Traoré, Etienne Gheeraert and Philippe Ferrandis
Characterization of hole trapping in β-Ga₂O₃ Schottky diode by electron beam induced current
International workshop on gallium oxide and related materials, Berlin, Germany, May 26-31, 2024

Marielena Velasco-Enriquez, Isabelle Gelard, Carmen Jimenez, Herve Roussel, Philippe Ferrandis, Eirini Sarigiannidou, and Vincent Consonni
Epitaxial growth of Ga₂O₃ thin films using pulsed-liquid injection MOCVD
International workshop on gallium oxide and related materials, Berlin, Germany, May 26-31, 2024

Eva Monroy, Hanako Okuno, Herve Roussel, Jean-Luc Rouvière, Anna Bujak, Andy Seguret, Philippe Ferrandis and Vincent Consonni
Molecular beam epitaxy of Al-Polar AlN(0001) on β-Ga₂O₃(-201)
International workshop on gallium oxide and related materials, Berlin, Germany, May 26-31, 2024

Anna Bujak, Hanako Okuno, Herve Roussel, Jean-Luc Rouvière, Philippe Ferrandis, Vincent Consonni and Eva Monroy
Plasma-assisted molecular beam epitaxy of wurtzite AlN(0001) on β-Ga₂O₃(-201)
E-MRS Fall Meeting. Symposium E : Ultrawide bandgap semiconductors for energy and electronics (UWBS2E), Warsaw, Poland, September 18-21, 2023

Andy Seguret, Hanako Okuno, Hervé Roussel, Jean-Luc Rouvière, Anna Bujak, Philippe Ferrandis, Edith Bellet-Amalric, Vincent Consonni, and Eva Monroy
Molecular Beam Epitaxy of Al-Polar Wurtzite AlN(0001) on β‑Ga2O3(‑201) Substrates
ACS Materials Lett. 7, 660 (2025)

Coralie Perrier’s thesis defense
Impact of deep traps on the electrical properties of β-Ga₂O₃ Schottky barrier diodes
January 16, 2024 at 9:30 a.m., Institut Néel, Bât. A, salle des séminaires